technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com dual ultrafast power rectifier qualified per mil-prf-19500/617 t4-lds-0020 rev. 1 (072046) page 1 of 1 devices levels 1n6672 1n6672r jan 1n6673 1N6673R jantx 1n6674 1n6674r jantxv absolute maximum ratings (t c = +25c unless otherwise noted) (per diode) parameters / test conditions symbol value unit peak repetitive reverse voltage 1n6672, r 1n6673, r 1n6674, r v rwm 300 400 500 vdc average forward current (1) t c = +100c i f 15 adc peak surge forward current i fsm 150 a(pk) thermal resistance - junction to case r jc 2.0 c/w note: (1) derate @ 150ma/c above t c = 100c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit breakdown voltage (2) i r = 500adc 1n6672, r 1n6673, r 1n6674, r v br 300 400 500 vdc forward voltage (2) i f = 10a (pk) i f = 20a (pk) v f1 v f2 1.35 1.55 vdc reverse leakage current (2) v r = 240v v r = 320v v r = 400v 1n6672, r 1n6673, r 1n6674, r i r1 50 adc reverse leakage current (2) v r = 240v, t c = +100c v r = 320v, t c = +100c v r = 400v, t c = +100c 1n6672, r 1n6673, r 1n6674, r i r2 5 madc reverse recovery time i f = 0.5a, i r = 1a, i rr = 0.25a t rr 35 ns junction capacitance v r = 10vdc, f = 1.0mhz, v sig = 50mv (p-p) (max) c j 150 pf note: (2) pulse test; 300s, duty cycle 2% to-254 ? 1 ? 2 ? 3 1n6672, 1n6673, 1n6674 ? 1 ? 2 ? 3 1n6672r, 1N6673R, 1n6674r downloaded from: http:///
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